elektronische bauelemente bcpa94 -0.2a , -400v pnp plastic encapsulated transistor 03-nov-2012 rev. c page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ?? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free feature ? excellent h fe linearity package information absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo -400 v collector to emitter voltage v ceo -400 v emitter to base voltage v ebo -5 v collector current - continuous i c -200 ma collector power dissipation p c 500 mw junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo -400 - - v i c = -100 a, i e =0 collector to emitter breakdown voltage v (br)ceo -400 - - v i c = -1ma, i b =0 emitter to base breakdown voltage v (br)ebo -5 - - v i e = -100 a, i c =0 collector cut-off current i cbo - - -0.1 a v cb = -400v, i e =0 collector cut-off current i ceo - - -5 a v ce = -400v, i b =0 emitter cut-off current i ebo - - -0.1 a v eb = -4v, i c =0 h fe (1) 80 - 300 v ce = -10v, i c = -10ma h fe (2) 70 - - v ce = -10v, i c = -1ma h fe (3) 60 - - v ce = -10v, i c = -100ma dc current gain h fe (4) 80 - - v ce = -10v, i c = -50ma v ce(sat) (1) - - -0.2 v i c = -10ma, i b = -1ma collector to emitter saturation voltage v ce(sat) (2) - - -0.3 v i c = -50ma, i b = -5ma base to emitter saturation voltage v be(sat) - - -0.75 v i c = -10ma, i b = -1ma transition frequency f t 50 - - mhz v ce = -20v, i c = -10ma, f=30mhz package mpq leader size sot-89 1k 7 inch sot-89 millimete r millimete r ref. min. max. ref. min. max. a 4.40 4.60 g 0.40 0.58 b 3.94 4.25 h 1.50 typ c 1.40 1.60 j 3.00 typ d 2.25 2.60 k 0.32 0.52 e 1.50 1.85 l 0.35 0.44 f 0.89 1.20 a e c d b k h f g l j 1 2 3 4
elektronische bauelemente bcpa94 -0.2a , -400v pnp plastic encapsulated transistor 03-nov-2012 rev. c page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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